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Enhanced H_2 sensing of SnO_2 nanowires functionalized with Pt and Pd catalyst nanoparticles

机译:用Pt和Pd催化剂纳米粒子官能化的SnO_2纳米线的增强H_2感测

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SnO_2 nanowires with a tetragonal structure were synthesized by thermal evaporation of tin grains at 900°C. The obtained SnO_2 nanowires were doped with Pt and Pd. The morphology, crystal structure, and H_2 sensing properties of undoped, Pt-doped, and Pd-doped SnO_2 nanowires were investigated. SnO_2 nanowires were approximately 30–200 nm in diameter and several tens of micrometers in length. Gas sensors based on undoped, Pt-doped, and Pd-doped SnO_2 nanowires showed a reversible response to H_2 at an operating temperature of RT–300°C. The response was improved in the order undoped < Pt-doped < Pd-doped SnO_2 nanowire sensors under the same conditions. The highest response upon exposure to 1000 ppm H_2 was 252.9 at 100°C for Pd-doped SnO_2 nanowire sensor. The results demonstrated that impurity doping improved the sensor response and lowered the operating temperature at which the sensor response was maximized.
机译:通过在900℃下的锡颗粒热蒸发合成具有四方结构的SnO_2纳米线。获得的SnO_2纳米线掺杂有Pt和Pd。研究了未掺杂,Pt掺杂和PD掺杂的SnO_2纳米线的形态,晶体结构和H_2感测性质。 SnO_2纳米线的直径约为30-200nm,长度为几十微米。基于未掺杂,Pt掺杂的气体传感器和PD掺杂的SnO_2纳米线在RT-300℃的工作温度下对H_2的可逆响应显示出可逆响应。在相同条件下,在未掺杂的t掺杂的d掺杂的SnO_2纳米线传感器下的顺序得到改善。在100℃下暴露于1000ppm H_2时,最高反应在100℃下为PD掺杂的SnO_2纳米线传感器。结果表明,杂质掺杂改善了传感器响应并降低了传感器响应最大化的工作温度。

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