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Modified Electrical Characteristics of Filtered Cathodic Vacuum Arc Amorphous Carbon Film on n-Si (100) by Heat Treatment

机译:用热处理改造过滤的阴极真空弧非晶碳膜非晶碳膜的电气特性

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摘要

Carbon allotropes are of great interest recently due to theirs novel applications. This paper examines the electrical behavior of amorphous carbon film, deposited on n-Si substrate by filtered cathodic vacuum are (FCVA) deposition methodology, after treating it at high temperature. XPS data is also used to further understand the material. FCVA amorphous carbon film deposited at 1000V and post deposition heat-treated at 800°C is suggested to achieve a better Ohmic contact to n-Si substrates with total resistance 1200Ω compared to other settings with total resistance up to 2000Ω.
机译:由于他们的新应用,最近碳异质熵很大。本文在高温处理后,通过过滤的阴极真空沉积在N-Si底物上沉积在N-Si底物上的无定形碳膜的电学特性。 XPS数据也用于进一步了解材料。沉积在1000V的FCVA非晶碳膜和800℃的沉积后沉积热处理,以实现与具有总电阻1200Ω的N-Si基材的更好的欧姆接触,与其他设置高达2000Ω。

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