Above 500V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

摘要

Above 500V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth are investigated. These SJ-MOSFETs show the lowest specific on-resistance (RonA) of 21.3mOmegacm2 at a breakdown voltage (VB) of 540V, among reported trench-filling type of devices in the same voltage class. These RonA-VB trade-off characteristics are accomplished by optimizing doping concentrations of n- and p- column regions. In addition, low reverse biased leakage current has been achieved by filling deep trenches with defect-free single crystal silicon