Statistical analysis of EMI noise measurement for Flash Memory

摘要

Due to the miniaturization of a variety of consumer and communications electronics, the layout and trace routing of circuits and components become much denser than ever before. Meanwhile, with the development of IC technologies advancing toward nano-meter processing node and higher operating frequencies in recent years, the systems of highly integrated high-speed digital circuits are now facing the challenge from performance degradation by more complicated electromagnetic noisy environment. The EM noises emitted by unintentionally radiated sources (like digital integrated circuits) will severely interfere with the sensitive devices via trace coupling or direct radiation, and thus result in the severe performance degradation of system or even system error. To achieve the electromagnetic compatibility at integrated circuit level, it is important to measure and analyze the influence of EMI emission from ICs impact on performance of system assembly and PCB layout. In this paper, we will utilize the IC-EMI measurement standards IEC 61967-2 (TEM cell method) and IEC 61967-3 (Surface scan method) with miniaturized magnetic probe to investigate the statistical behavior of EMI noise generated from Flash Memory. We will then analyze the EMI noise radiated from Flash under different operating voltages, command instructions, operating frequencies, and capacities. As to the Flash controlling mechanism, we use Microchip PIC to control Flash data access execution and then try to establish the noise budget of Flash with different measuring methods. The IC manufacturers and their customers for system applications will benefit from provision of the noise budget to realize the IC EMI characteristics in early design stage.