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Accurate prediction of EMI-induced rectification effects in nonlinear analog circuits using behavioral modeling

机译:使用行为建模准确预测非线性模拟电路中的EMI诱导效应

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The effects of Electromagnetic Interference (EMI) on the DC quiescent point of a circuit require expensive transient simulations due the settling of large time constants of the circuit combined with high frequency interference signals. This paper applies behavioral modeling to accurately predict EMI-induced rectification on a wide range of analog circuits. Analytical models are derived for predicting the DC voltage shifts, introduced by the interaction with EMI, over a large range of amplitudes and frequencies. The proposed methodology can be applied to numerous analog circuits that need exhaustive EM susceptibility verification using a minimal amount of measurements to extract the model parameters. The approach is validated on some basic analog building blocks.
机译:电磁干扰(EMI)对电路DC静态点的影响需要由于电路的大时间常数与高频干扰信号结合而昂贵的瞬态模拟。本文适用行为建模,以准确地预测在各种模拟电路上的EMI诱导的整流。用于预测通过与EMI相互作用引入的DC电压偏移的分析模型,在大量的幅度和频率上引入。所提出的方法可以应用于许多模拟电路,该电路需要使用最小量的测量来提取模型参数的最小测量来提取令人遗憾的EM敏感性验证。该方法在某些基本模拟构建块上验证。

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