Design of CMP slurry in CMP SiC crystal substrate (0001) Si surface based on alumina (AI_2O_3) abrasive

摘要

SiC crystal substrate has been widely applied in the field of semiconductor industry and optical components recently, such as IC and semiconductor lighting. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina (Al_2O_3) abrasive had been done in CMP SiC crystal substrate (0001) Si surface by a lot of tests. A CMP slurry based on alumina (Al_2O_3) abrasive for SiC crystal substrate (0001) Si surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 3 nm/min and the surface roughness Ra is about 0.198um.