Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering

摘要

The high quality ZAO thin films were successfully produced by DC reaction magnetron sputtering technology. The XRD, electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure, and Al_2O_3 crystal phase are not found. At the same time, the high quality ZAO films with the minimum resistivity of 4.5×10~(-4)Ω·㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.