A Novel Approach of Reusing Kerf Loss Wastes in Preparation of β-SiC/Si_2N_2O Bonded SiC Refractory

摘要

A novel approach of reusing kerf loss wastes in preparation of β-SiC/Si_2N_2O bonded SiC refractory has been proposed. Thermodynamic analysis was conducted to prove the theoretical feasibility. β-SiC/Si_2N_2O bonded SiC refractory was successfully prepared at 1723K by adding kerf loss wastes replacing partial industrial SiC and Si powder on the condition of being buried with carbon. The β-SiC/Si_2N_2O bonded SiC refractory exhibited low porosity and excellent mechanical properties. Both Silicon powder in kerf loss wastes and industrial silicon powder formed β-SiC/Si_2N_2O and a small amount of SiO_2. The approach proposed is beneficial for reducing the cost of preparation of SiC-based refractory as well as protecting the environment.