A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power Switches

摘要

In recent years, the rapid increase in the market for hybrid electric vehicles has generated great demand for low-cost, high-volume, high-temperature power converters that can work in harsh environment (temperature ≥ 150°C) conditions. Most of the commercially available power semiconductor devices and associated control electronics are rated for maximum of 85°C ambient temperature. Under this circumstance, wide bandgap (WBG) semiconductors have become a better alternative due to their ability to operate at much higher temperatures (≥500°C) than conventional bulk silicon based devices. As with any other power devices, SiC switches also require fault detection and protection mechanisms for their reliable application to real systems. One severe fault situation is the short circuit at the load end, which can cause very high surge currents that flow through the power switches. Quick detection and removal of the short circuit fault current by external circuitry is required to protect the power switch as well as the power converter module. This work presents a high-temperature (≥200°C), high-voltage short circuit protection (SCP) for SiC power devices. The circuit is designed using a resistor sensing method to provide protections for both "normally ON" and "normally OFF" SiC FET switches. A rail-to-rail input comparator is employed to ensure that the circuit operates under different power supply levels. The prototype circuit is implemented using a 0.8-micron, 2-poly, and 3-metal BCD-on-SOI process. The die size for the protection circuit is 0.52 mm~2 (845 μm×612 μm). The circuit has been successfully tested up to 200°C ambient temperature under power supplies ranging from 10 V to 30 V without any heat sink or cooling mechanism.