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Optical properties of vertical silicon nanowire arrays withrandom position, diameter, or length

机译:垂直硅纳米线阵列的光学性质,阵列阵列,直径或长度

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The optical properties of ordered and disordered vertical silicon nanowire arrays, including random position, diameter, and length, are investigated using the finite-difference time-domain method. The ordered array with diameter of 100 nm shows overall small reflection and large absorption. An absorption peak is located at 2.4 eV, which is due to the optical resonance effect. Both randomly-positioned and random diameter arrays remain unreflective as the ordered array. The absorptance of randomly-positioned nanowire arrays has similar frequency dependence as ordered array, while it is enhanced due to the enhanced scattering. Random diameter array has a different absorptance profile and no evident absorption peak is observed, which is explained by the different resonant frequencies of the inclusion nanowires. Random length can create a random rough top surface on the nanowire arrays, which can reduce reflection and enhance absorption compared to uniform top surface.
机译:使用有限差差时域法研究有序和无序垂直硅纳米线阵列的有序和无序硅纳米线阵列的光学性质,包括随机位置,直径和长度。具有直径为100nm的有序阵列显示出总体的小反射和大吸收。吸收峰位于2.4eV,这是由于光学共振效应。随机定位和随机直径阵列都作为有序阵列保持不现一。随机定位的纳米线阵列的吸收率与有序阵列相似的频率依赖性,而由于增强的散射,它增强。随机直径阵列具有不同的吸收曲线,并且没有观察到明显的吸收峰,这通过夹杂物纳米线的不同谐振频率解释。随机长度可以在纳米线阵列上产生随机粗糙的顶面,这可以减少与均匀顶表面相比的反射和增强吸收。

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