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Structure and magnetic properties of FeNi/Ti sputtered multilayers

机译:Feni / Ti溅射多层的结构和磁性

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The microstructure, anisotropic magnetoresistance, magnetic properties and magnetic domain structure of sputtered FeNi films and [Ti/FeNi]_n (n = 2-16) multilayers were comparatively analyzed. It was found that although the grain size increases with an increase of the FeNi thickness both in the case of FeNi films and [Ti/FeNi]_n multilayers, it did not exceed 25 nm. The values of anisotropic magnetoresistance for FeNi films and [Ti/FeNi]_n multilayers were close to each other showing a weak dependence on the total thickness of the multilayered structure. Coercivity for multilayers was found to be smaller than the coercivity of single layer FeNi films. Despite the absence of a direct exchange interaction bctween FeNi neighboring laycrs in the [Ti/FeNi]_n structures, their domain structures were found to be quite different from magnetic domains in single layer films due to stray field compensation in the multilayers. Obtained results are useful for the development of sensitive elements for small magnetic field detectors and planar inductors.
机译:相对分析了溅射的Feni膜的微观结构,各向异性磁阻,磁性和磁性结构和磁畴结构(n = 2-16)多层。发现,尽管在Feni薄膜和[Ti / Feni] _n多层的情况下,晶粒尺寸随着Feni厚度的增加而增加,但它不超过25nm。 Feni膜的各向异性磁阻的值和[Ti / Feni] _N多层彼此靠近,显示对多层结构的总厚度的弱依赖性。发现多层的矫顽力小于单层Feni薄膜的矫顽力。尽管在[Ti / Feni] _N结构中没有直接交换交互BCTWEEEN FENI相邻的特写,但由于多层中的杂散场补偿,它们的畴结构与单层膜中的磁畴完全不同。获得的结果对于开发用于小磁场检测器和平面电感器的敏感元件。

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