Self-catalyzed InP Nanowires on Patterned Si Substrates

摘要

Self-catalyzed growth of position-defined InP nanowires (NWs) was investigated on SiO_2-mask-pattered Si substrates using metalorganic vapor-phase epitaxy. Using low growth temperatures and high group-III flow rates, pyramidal InP NWs were formed vertically on the mask openings. The diameter and tapering of the InP NWs were successfully controlled by the introduction of HCl and H_2S gases during the NW growth. In addition, crystal growth of radial InP/InAsP/InP quantum wells on the sidewall of the InP NWs was performed on Si substrates.