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STRUCTURE AND REACTIVITY OF III-V SEMICONDUCTORS FOR PHOTOELECTROCHEMICAL HYDROGEN PRODUCTION

机译:III-V半导体对光电化学氢气产生的结构和反应性

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Semiconductor-based photoelectrochemical (PEC) hydrogen production from water represents an attractive approach for sustainable fuel production. In a PEC device, the semiconductor acts both as a photon harvester and as a catalytic surface for interfacial hydrogen evolution from water. For optimal efficiency, the semiconductor band gap must be matched to the solar spectrum to maximize collection, and the valence and conduction band edges should closely match the redox potentials of water. Recognizing this, past efforts have concentrated on engineering the band gap and level alignment to the redox potential of water. Nevertheless, although results have demonstrated that one can achieve sufficiently high solar-to-fuel conversion efficiency, this efficiency has come at the expense of short device lifetime due to fast degradation of the electrode. Further progress has been limited by a poor fundamental understanding of the hydrogen evolution and corrosion processes at the electrode-water interface.
机译:基于半导体的光电化学(PEC)来自水的氢气产生了一种可吸引人的可持续燃料生产方法。在PEC器件中,半导体作为光子收割机作用,作为来自水的界面氢化的催化表面。为了获得最佳效率,必须与太阳光谱匹配的半导体带隙以最大化收集,并且价和导带边缘应与水的氧化还原电位密切匹配。认识到这一点,过去的努力集中在工程中,与水的氧化还原电位的频带隙和水平对准。然而,虽然结果表明,但是由于电极的快速降解,这种效率已经牺牲了短的装置寿命。进一步的进展受到电极 - 水界面的氢进化和腐蚀过程的差的基础知识。

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