首页> 外文会议>International Symposium on Extreme Ultraviolet Lithography >Development of New Negative-tone Molecular Resists Based on Phenylcalix 4 resorcinarene for EUVL: Investigation of correlation with the octanol water partition coefficient and the sensitivity of negative -tone molecular resists - (PPT)
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Development of New Negative-tone Molecular Resists Based on Phenylcalix 4 resorcinarene for EUVL: Investigation of correlation with the octanol water partition coefficient and the sensitivity of negative -tone molecular resists - (PPT)

机译:基于苯基碱的新负性分子抗性的开发4反子丙烯用于EUVL:与辛醇水分配系数的相关性研究,阴性分子抗蚀剂的敏感性 - (PPT)

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We invested of correlation with the octanol water partition coefficient and the sensitivity of negative-tone molecular resists based on calix [4] resorcinarene (CRA) by Electron Beam Lithography (EBL). The sensitivity of negative-tone molecular resists were higher as the value of the octanol water partition coefficient got smaller. It was confirmed that the octanol water partition coefficient was useful to the guess of sensitivity of negative-tone molecular resists. Furthermore, we have developed new calix [4] resorcinarenes showing well-defined sub 20nm half-pitch patterns. Future study is underway to improve resist performance through material and process optimization to evaluate resist performance by EUV lithography (EUVL).
机译:我们通过电子束光刻(EBL)对Colix [4]间苯二烯酰胺(CRA)的辛醇水分配系数和负色调分子抗蚀剂的敏感性进行了相关性。由于辛醇水分配系数的值变小,阴性分子抗蚀剂的敏感性较高。证实辛醇水分配系数对于猜测阴性分子抗蚀剂的敏感性是有用的。此外,我们已经开发出新的Calix [4]系列,显示明确定义的子20nm半间距图案。通过材料和工艺优化来提高未来的研究,以提高抗蚀性能,以评估EUV光刻(EUVL)的抗蚀性能。

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