As minimum feature sizes continue to get smaller in extreme ultraviolet lithography (EUVL), issues regarding higher aspect ratios and in effect, pattern collapse are encountered. Another main issue for these small feature sizes is the line width roughness (LWR) for presently available EUV resists. As a solution, the application of alternative rinse solutions and processes have been continuously investigated and applied for pattern collapse prevention. It has also been reported that these alternative rinse solutions are effective for reducing LWR. However, LWR values of present EUV resist are still too large in comparison to the required targets. In this work, various alternative rinse solutions and after-development- rinse process for application in EUV lithography were investigated. Focusing on LWR reduction and pattern collapse prevention, the application of the most effective alternative rinse solutions and the optimization of after-development-rinse methods utilized will be presented.
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