Structural and Optical Properties of In_2O_3 Films Grown on (0001) Sapphire Substrates by Alternate Supply of Trimethyl-Indium and Nitrous Oxide

摘要

Transparent conducting oxides (TCOs) have received great attention in recent years. Among them, In_2O_33 exhibits a wide band gap of 3.7 eV at room temperature (RT) and high optical transparency with good chemical stability. In_2O_3 crystallizes in the cubic bixbyite structure with the space group of Ia3, and its complicated unit cell contains 80 atoms with a lattice parameter of 10.118 A, in which the 32 In~(3+) ions occupy the 8b and 24d sites and the 48 O~(2-) occupy the 48f site, respectively. The 16c site is the quasi-anion site unoccupied, whose regular arrangement leads to a superstructure in In_2O_3 single crystal [1], There are four kinds of subunits, octant types I-IV (Figure la), which are packed regularly in a cube to form an In_2O_3 unit cell as shown in Figure lb.