In order to clarify the formation kinetics of self-interstitial atom (SIA) clusters in cubic silicon carbide during irradiation, nucleation and growth process of SIA-clusters have been evaluated by Kinetic Monte-Carlo simulation technique, in which defect energetics investigated by MD and MS combined method is employed. In the simulations, at relatively high temperatures formation of SIA-clusters is dominated by thermal stability of the clusters, while the formation is dominated by influx of interstitials into the cluster at relatively low temperatures. It follows from these arguments that formation kinetics of SIA-clusters in cubic silicon carbide during irradiation can be classified by temperature into the two types.
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