Parallel-Perpendicular Kinetic Energy Coupling Effect on Electron Tunneling Currents in Al/HfO_2/p-Ge and Al/SiO_2/p-Si MOS Diodes with Nanometer-Thick Oxides

摘要

Electron tunneling in Al/SiO_2/p-Si and Al/HfO_2/p-Ge MOS diodes under inversion and accumulation conditions was studied by taking into account the coupling of parallel-perpendicular kinetic energy and Airy wavefunctions. The calculated results showed that the tunneling currents in the Ge-based MOS diode are considerably lower than those in the Si-based one. The HfO_2/Ge structure could therefore replace the SiO_2/Si one to avoid the significant leakage current in MOS devices.