Concatenated Reed-Solomon Code with Hamming Code for DRAM Controller

摘要

In this paper, we propose a concatenated Reed-Solomon code with a Hamming code for dynamic random access memory (DRAM) controller. The concatenated code consists of a Reed-Solomon outer code, two shortened Reed-Solomon codes, and a Hamming inner code. The proposed code takes the advantages of Reed-Solomon codes and Hamming codes to protect DRAM memory data against single event upsets and multiple bit upsets. At the byte error rate of 10"7, the proposed decoder shows about 1.3 dB of coding gain over that of the conventional Reed-Solomon decoder. We implement the proposed concatenated Reed-Solomon code on a very large-scale integration (VLSI) chip with 0.13 urn complementary metal oxide semiconductor (CMOS) standard cell library at a supply voltage of 1.2 V. The core area of proposed architecture is 1.12 mm~2 with the gate counts of 121,900. The synthesized result shows the maximum throughput of 1.71 Gbps and the measured power consumption of 69 mW at 259 MHz.