Metal - Insulator Transition in Bi_2Sr_2Cu_1O_(6+d)(Bi-2201) Thin Films

摘要

We have studied the influence of disorder induced by oxygen on the normal stateresistivity of under doped Bi_2Sr_2Cu_1O_(6+d) (Si-2201) thin films, deposited in situ onto heatedSrTiO_3(100) substrates by using DC magnetron sputtering for an off-stoichiometric target. Thecompositions and structural characterization for the deposited films were carried by (EDX),(XPS) and X-ray diffraction measurements. The effect of partial oxygen pressure in thesputtering gas on the metal-insulator transition are presented.