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High Order Derivatives Technology in Advanced MEMS Modeling

机译:高阶衍生工艺技术在高级MEMS建模中

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Modeling is an important step of the MEMS design. The simulation of MEMS components consist of several iteration levels. The physical behavior of 3D continuums is described by partial differential equations which are typically solved by the finite element (FE) method. The FE method allows for interactions among different physical domains to obtain static, modal, frequency and transient responses. From a large-scale 3D multi-physics simulation to reduced order modeling (ROM), one is interested to obtain the model response with respect to design parameters. Such simulations provide full information of the device behavior and lead to MEMS components with optimized performance parameters at system-level. Currently, the parametric model is extracted by series of discrete FE solutions and subsequent interpolation procedures (multivariate polynomial and rational fitting, Gaussian process regression). Especially for a large set of design variables, data sampling and fit become time consuming and prone to errors. In contrast to the data sampling technique, the paper deals with some aspects of the high order derivatives (HOD) analysis for determining the model response. The application of HOD analysis to FE equations as a way to increase the efficiency and robustness was started in the middle of the 1990s [1]. The model response can be expanded in the vicinity of the initial position with regard to dimensional and physical parameters in a single FE run as multivariate Taylor series or its Pade equivalent. The objective of this paper is to demonstrate the implementation process and performance of the HOD FE analysis to parametric simulation of MEMS in the different response domains on the basis of the structural analysis and ROM.
机译:建模是MEMS设计的重要步骤。 MEMS组件的模拟包括几个迭代级别。 3D连续体的物理行为由偏微分方程描述,这些方程通常由有限元(Fe)方法解决。 FE方法允许不同物理域之间的交互,以获得静态,模态,频率和瞬态响应。从大规模的3D多物理模拟到减少订单建模(ROM),一个人有兴趣获得关于设计参数的模型响应。这种仿真提供了设备行为的完整信息,并导致MEMS组件在系统级别具有优化的性能参数。目前,参数模型由一系列离散的FE解决方案和随后的插值程序(多变量多项式和合理拟合,高斯过程回归)提取。特别是对于一大集的设计变量,数据采样和适合耗时,易于错误。与数据采样技术相比,本文涉及高阶导数(HOD)分析来确定模型响应的一些方面。 HOD分析在Fe方程中作为提高效率和鲁棒性的一种方式,在20世纪90年代中期开始[1]。模型响应可以在单个FE中的尺寸和物理参数的初始位置附近扩展,以作为多变量泰勒系列或其倾向等效的。本文的目的是在结构分析和ROM的基础上展示与不同响应域中的MEMS参数模拟的实施过程和性能。

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