RESPONSE OF NERVE CELL TO INHIBITOR RECORDED BYALUMINIUM-GALLIUM-NITRIDE FET

摘要

In this work we report on the recording of extracellular potentialof NG 108-15 nerve cells as response to diisopropylfluorophosphate (DFP)using an open gate aluminium gallium nitride/gallium nitride (AIGaN/GaN)field effect transistor. The biocompatibility study of our GaN materials withNG108-15 nerve cells shows a proliferation rate of about 95%. The DFPwas added to the medium with and without adherent cells and we record thesource-drain current (IDS) of the AIGaN/GaN field effect transistor versustime. The cells react very differently to the inhibitor in the case of repeatedtitrations of the DFP inhibitor. A saturation concentration was determined,above which no further cell reaction was detectable. Sensor reactionwithout cells exhibits a clearly distinguishable behavior.