Temperature-Dependent PL Intensity in FLA-Synthesized and Hydrogen-Modified Silica Layers with Silicon Nanocrystals

摘要

The temperature dependence of the photoluminescence intensity I in flash-lamp-anneal-synthesized silica layers with small silicon nanocrystals (nc's) and in similar layers heat-treated in hydrogen-(H-) rich ambient was used to examine how H treatments affect the "dark" fracture of nc's and the migration paths of optically induced excitations in such systems. It can be inferred from the data obtained that the fracture of "dark" nc's in the systems of interest is generally not large, hydrogen weakly passivates defects in small-size nc's, and the influence of H treatments on the parameters governing the temperature dependence of I is insignificant.