Quasi-ballisticity of the electron transport in a 16nm silicon double-gate nMOSFET

摘要

A deterministic Boltzmann equation solver including the Pauli principle based on a Fourier Harmonic expansion of arbitrary order [1] is used to explorer electron transport in a 16nm double gate nMOSFET. The Boltzmann, Schrödinger and Poisson equations are solved self-consistently. Phonon scattering and surface roughness scattering are considered. Strong ballistic transport is manifested in the shape of the electron distribution functions at different positions along the channel. Directional current and the reflection coefficient are examined at various biases of the on-state.