A Physical Model Based on Surface Potential for Double-Gate a-Si:H TFTs

摘要

In this paper, a physical model based on surface potential is presented for double gate a-Si:H TFTs. Firstly, a new model for the distribution of potential and electrical field along the bulk a-Si:H layer is proposed when both the front and back gates are biased in the positive voltages. Using this model, the front and back surface potential can be calculated from the equation groups by the iterative method. Secondly, a charge sheet model is developed and then verified using the experimental data.