A low-temperature sintering technique enabled by a nanoscale silver paste has been developed for attaching large-area (> 1 cm~2) semiconductor devices. Recently, we showed that a nanoscale silver paste could be used to bond small devices at temperatures similar to solder-reflow temperatures with-out any externally applied pressure. In this study, we extended the use of the nanomaterial to attach large-area devices by introducing a low pressure up to 5 MPa. The effects of pressure on bonding strength and sintered microstructure have been investigated. Scanning electron microscopy showed that the attachment layer had a uniform microstructure with micron-sized porosity with the potential for high reliability under high temperature applications.
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