A 10Gb/s Burst-Mode Laser Diode Driver for IEEE 802.3av 10G-EPON Applications

摘要

The IEEE standards board has announced the approval of the 10G-EPON standard, IEEE Std. 802.3av. In this paper, a 1OGb/s burst-mode laser diode driver for the symmetric-rate 10G-EPON ONU applications is described. It is designed with a low-cost 0.18μm CMOS process. Post-simulation results that it has a speed of 10.3125Gb/s, and is able to provide up to 35mA modulation current under a 1.8V power supply. The burst turn-on/-off delays are both less than Ins. The dimension of the laser diode driver is 575μm × 675μm.