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DC-Coupled Burst-Mode Laser Diode Driver with Automatic Power Control for 1.25Gbit/s PON System

机译:具有1.25Gbit / s PON系统的自动功率控制的直流耦合突发模式激光二极管驱动器

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摘要

An integrated burst-mode laser diode driver is presented for PON application. The bias current range and modulation current range are 1-75 mA and 5-80 mA respectively. The DC-coupled interface between the driver and the laser diode can tolerate the output transient voltage as low as 0.6v. The novel digital APC loop can stabilize the output average optical power and extinction ratio respectively within ±0.3 dBm and ±0.4 dB (-40 to 100℃) with less than 0.6 μs initialization time and infinite bias current and modulation current hold time. Moreover, the fast burst response is achieved with burst on/off time less than 5 ns. The chip is implemented in a TSMC 0.35-μm SiGe BiCMOS technology and occupies an area of 1.56×1.67 mm{sup}2 with power consumption of 105 mW from a supply voltage of 2.5 v.
机译:提出了一种集成的突发模式激光二极管驱动器,用于PON应用。偏置电流范围和调制电流范围分别为1-75 mA和5-80 mA。驱动器和激光二极管之间的直流耦合接口可以承受低至0.6v的输出瞬态电压。新颖的数字APC环路可在不到0.6μs的初始化时间以及无限的偏置电流和调制电流保持时间的情况下,将输出平均光功率和消光比分别稳定在±0.3 dBm和±0.4 dB(-40至100℃)内。此外,在不到5 ns的突发开启/关闭时间下即可实现快速突发响应。该芯片采用TSMC0.35-μmSiGe BiCMOS技术实现,占地面积为1.56×1.67 mm {sup} 2,电源电压为2.5 v时功耗为105 mW。

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