The Damage Analysis of Nd:YVO4 Crystal Implanted by He+ Ions at Low Energy

摘要

We report the damage properties of the He+ ions implanted Nd:YVO4 crystal. Implantation was carried out at room temperature by He+ ions at the doses of 1×1016, 2×1016, and 4×1016 ions/cm2 with the energy of 200keV. The depth of the damage region is about 0.85μm beneath the surface. Rutherford backscattering spectrometry (RBS)/channeling technique was used to investigate the damage profile of ions implanted samples. Low atomic displacement ratio in as-implanted samples indicates a high irradiative resistance of YVO4 crystal and the dynamic annealing effect of He+ ions in the implantation process. Post-implant annealing was performed for all the samples at 200oC and 300oC for an hour, respectively. The height and width of damage peak decreased somewhat after annealing at 200oC. Repairing and re-crystallization of damaged lattice was achieved after annealing at 300oC. Photoluminescence of ion-implanted samples were measured to investigate effect of implantation on fluorescence properties of Nd3+. The damage on sample surface was analyzed by optical microscopy (OM) and atomic force microscopy (AFM).