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Contact mask made from monocrystalline silicon used in ion implantation comprises openings permeable for high energy ions arranged between the upper side of the mask and the lower side of the mask
Contact mask made from monocrystalline silicon used in ion implantation comprises openings permeable for high energy ions arranged between the upper side of the mask and the lower side of the mask
Contact mask (1) made from monocrystalline silicon comprises openings (3) permeable for high energy ions arranged between the upper side (4) of the mask and the lower side (5) of the mask. The openings have a predetermined shape and cross-section (8) with exact edge contour in the region of the lower side and have a non-exact edge contour in the region of the upper side. The sections of the openings in the region of the upper side have a larger cross-section than the cross-sections of the openings in the region of the lower side. The larger cross-sections completely cover the smaller cross-sections. An Independent claim is also included for a process for the production of a contact mask. Preferred Features: The openings are accessible for all ions. The openings have a longitudinal or circular cross-section.
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