首页> 外国专利> Contact mask made from monocrystalline silicon used in ion implantation comprises openings permeable for high energy ions arranged between the upper side of the mask and the lower side of the mask

Contact mask made from monocrystalline silicon used in ion implantation comprises openings permeable for high energy ions arranged between the upper side of the mask and the lower side of the mask

机译:离子注入中使用的由单晶硅制成的接触式掩模包括可渗透高能离子的开口,这些开口设置在掩模的上侧和掩模的下侧之间

摘要

Contact mask (1) made from monocrystalline silicon comprises openings (3) permeable for high energy ions arranged between the upper side (4) of the mask and the lower side (5) of the mask. The openings have a predetermined shape and cross-section (8) with exact edge contour in the region of the lower side and have a non-exact edge contour in the region of the upper side. The sections of the openings in the region of the upper side have a larger cross-section than the cross-sections of the openings in the region of the lower side. The larger cross-sections completely cover the smaller cross-sections. An Independent claim is also included for a process for the production of a contact mask. Preferred Features: The openings are accessible for all ions. The openings have a longitudinal or circular cross-section.
机译:由单晶硅制成的接触掩模(1)包括可渗透高能量离子的开口(3),其布置在掩模的上侧(4)和掩模的下侧(5)之间。开口具有预定的形状和横截面(8),在下侧的区域中具有精确的边缘轮廓,而在上侧的区域中具有不精确的边缘轮廓。开口在上侧的区域中的截面具有比开口在下侧的区域中的截面更大的横截面。较大的横截面完全覆盖较小的横截面。独立权利要求还包括用于制造接触掩模的方法。首选功能:所有离子均可进入这些开口。开口具有纵向或圆形的横截面。

著录项

  • 公开/公告号DE10062016A1

    专利类型

  • 公开/公告日2002-06-27

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2000162016

  • 发明设计人 KROENER FRIEDRICH;FRIZA WOLFGANG;

    申请日2000-12-13

  • 分类号H01L21/266;

  • 国家 DE

  • 入库时间 2022-08-22 00:27:14

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