Tunneling-injection High-power 1060-nm Quantum Dot Laser with Improved Temperature Stability

摘要

High-power 1060 nm quantum dot laser material was developed with tunnel injection quantum well active zones. This new type of laser material showed an improved internal efficiency (94%) and allowed output power in excess of 4.4 W (limited by the current source) with a high characteristic temperature (197 K) for 100 μm broad area lasers.