Analytical Modeling of Negative Bias Temperature Instability in Triple Gate MOSFETs

摘要

In this paper, an analytical model for Negative Bias Temperature Instability (NBTI) induced degradation in a triple gate MOSFET is presented. The model is obtained by solving the Reaction-Diffusion equations multi-dimensionally. The formulation considers the molecular diffusion of hydrogen in the oxide. The geometry dependence of the time exponent of NBTI degradation in triple gate MOSFETs are modeled in the framework. The accuracy of the model is verified using experimental results.