Simulation Study of Graphene Nanoribbon Tunneling Transistors Including Edge Roughness Effects

摘要

Atomistic tight-binding real space and mode space models are used to investigate the key design parameters of graphene nanoribbon tunneling transistors. For an ideal N_A = 12 nanoribbon FET, a 1890μA/μm ON current and an ON/OFF current ratio in excess of 105 can be achieved with V_(DD) = 0.4 V. The effect of edge roughness is also investigated showing a deterioration of the device performance, in particular in the OFF state, and high device variability.