Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

摘要

Carbon-based thermal stabilization techniques have been used for improving performance of CMOS periphery devices in memory application. Current drives are shown to improve by 15 and 30% for N & PMOS, respectively, external resistance of P+ improves by 15 X and N+ by 30%, and RO delay reduction of 25% compared to the conventional contact scheme.