Investigation of the Vertical IMOS-Transistor by Device Simulation

机译：通过装置仿真研究垂直IMOS晶体管

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The characteristics of vertical IMOS transistors are investigated with the help of 2D device simulations. The obtained results show the influence of different device parameters like doping concentration, charge carrier lifetime, and size of the floating body. Furthermore the static and dynamic switching behaviour is presented.

机译：借助于2D器件模拟研究了垂直IMOS晶体管的特性。所得结果表明不同器件参数如掺杂浓度，电荷载体寿命和浮体的尺寸的影响。此外，呈现了静态和动态切换行为。

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《International Conference on ULtimate Integration of Silicon》|2009年||共4页
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Rainer Kraus; Christoph Jungemann;
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中图分类 TN91-53;
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Investigation of the Vertical IMOS-Transistor by Device Simulation

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