Compact Modeling of Quantization Effects for Cylindrical Gate-All-Around MOSFETs

摘要

For the first time, a continuous analytical model of quantum-mechanical effects for cylindrical undoped Si-Nanowire MOSFETs is presented in this paper. By using a variational approach, this model is suitable for both structural and electrical confinement of carriers in the nanowire. This whole explicit model is developed in order to be integrated into a surface-potential-based model. The analytical model shows excellent agreement with numerical simulations and results concerning current-voltage (I-V) characteristics demonstrate the application of our compact model to circuit simulation.