Quantum mechanical effects (QME) are very significant in undoped (or lightly doped) FinFET with ultra-narrow silicon body. In this work, we present an explicit modeling of QME well-suited for FinFET compact modeling. Our model accounts for the Fin width dependence and predicts with accuracy the increase of threshold voltage and the decrease of drain saturation current due to QME. The modeling of both transconductance and output conductance gives evidence for the continuity and the differentiability of the model. Comparison with 3-D numerical simulations performed for different Fin widths shows the good behavior of the model in all regimes of FinFET operation.
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