Use a Theoretical Model to Investigate Reactive Sputtering of AlN Thin Films

摘要

In order to understand the physical and chemical processes of aluminium nitride thin films preparated by reactive sputtering, a reactive sputtering model model was developed. The mode of controlled cathode volatge at constant flow rates are investigated for the purpose of controlling the stoichimetry of AlN films. The mode is shown to provide a means for stable operation for any degree of target coverage.