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MULTIBAND DESCRIPTION OF THE ELECTRON-DOPED CUPRATE GAPS ON THE DOPING SCALE

机译:掺杂尺度上的电子掺杂铜替换间隙的多频带描述

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A model for the description of electron-doped cuprate superconductor excitation gaps on the doping scale is developed. Interband pairing channel is supposed between the defect states (two subbands) created by doping and the upper Hubbard band. Bare gaps between these systems leading to the appearance of pseudogaps close with extended doping. Extincting Hubbard bands supply the defect subsystem. Illustrative calculations for Tom,superconducting gaps, pseudogaps, supercarrier density, thermodynamical critical field and the coherence length are performed on the whole electron-doping scale. Critical dopings correspond to achieved band overlaps. Gross features of the phase diagram of electron-doped materials are reproduced in some analogy with the hole-doping case but in different realization.
机译:开发了一种用于掺杂刻度上的电子掺杂铜制超导体激励间隙的模型。间带配对通道假设由掺杂和上船乐频带创建的缺陷状态(两个子带)。这些系统之间的裸露差距,导致Pseudogaps的外观与延长的兴奋剂关闭。灭绝的Hubbard带提供缺陷子系统。汤姆,超导间隙,假体,超级载波密度,热力学临界场和相干长度的说明性计算是对整个电子掺杂秤进行的。临界掺杂对应于实现的带重叠。电子掺杂材料相图的总特征在一些类似的孔掺杂盒中被复制,但在不同的实现中。

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