Polarized Infrared Reflectance Studies of Quaternary InAM0.04Al_(0.06)Ga_(0.90)N

摘要

Group III-nitride has re-gained considerable interest recently as wide direct band gap semiconductor materials for opto-electronic and high power devices. The quaternary InAIGaN have great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. In this study, we report for the first time the polarized infrared (IR) reflectance studies of quaternary In_(0.04)Al_(0.06)Ga_(0.09)N by using Fourier transform infrared spectroscopy of Perkin-Elmer. The quaternary In_(0.04)Al_(0.06)Ga_(0.09)Nepilayers was grown on sapphire by molecular beam epitaxy. The polarized IR reflectance spectra obtained at incident angle of 15° were then compared with modeling spectrum of damped harmonic oscillator. Through this study, the transverse and longitudinal optical phonon modes of quaternary Ino In_(0.04)Al_(0.06)Ga_(0.09)N epilayers were obtained.