Polarized Infrared Reflectance Studies for Wurtzite In_0.10Ga_0.90N Epilayer on Sapphire Grown by MBE

摘要

Polarized infrared (IR) reflectance studies of In0.10Ga0.90N epilayer on sapphire substrate (Al2O3)grown by molecular beam expitaxy are presented. The features of the polarized IR reflectance spectraand the optical characteristics of In0.1Ga0.90N were investigated. Based on the anisotropic dielectricfunction model, the experimental IR reflectance spectra were numerically fitted by the theoretical IRreflectance spectra. Room temperature polarized IR reflectance measurements were performed at anoincident angle of 15 by using a Fourier transform infrared spectroscopy. Good agreement between themeasured and calculated spectra has been obtained. From the fit of the experimental curve, the opticalparameters at the center of Brillouin zone are determined for the In0.1Ga0.90N epilayer.