首页> 外文会议>SPIE Conference on Photonics North >Design, simulation and fabrication of nano-scale silicon-on-insulator (SOI) integrated photonic phased array switch elements (IPPAS) utilizing nano electromechanical systems (NEMS)
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Design, simulation and fabrication of nano-scale silicon-on-insulator (SOI) integrated photonic phased array switch elements (IPPAS) utilizing nano electromechanical systems (NEMS)

机译:利用纳米机电系统(NEMS)设计,仿真和制造纳米型硅 - 绝缘体(SOI)集成的光子相控阵开关元件(IPPAS)

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The goal of this research is to introduce the design and simulation of a novel 2×2 SOI integrated photonic phased array switch. Under-etched NEMS-operated slot waveguides are used as the active phase shifters offering the benefits of compact size and low power consumption. The design of the NEMS-operated phase shifter has been validated by numerical analysis and simulation. The finite difference mode three-dimensional full-vectorial solver of FIMMPROP is used for the simulation. The designed NEMS-operated phase shift element is only 349 μm in length, exhibits an excess loss of about 1.1 dB and provides a phase shift of 180o. Straight transition slot waveguide couplers with high efficiency of about 96.7% have been designed to couple the NEMS-operated phase shifters to standard unslotted waveguides. The 2×2 MMI (multimode interference) couplers used in the switch element feature a compact size of 4 μm × 61.2 μm, have a small excess loss of about 0.155 dB and minimal imbalance of about -0.004 dB. The NEMS-operated phase shifters are located on the sides of the switch with their outermost electrode bond pads. Optical interferogram response is utilized for the testing of the designed phase shifters.
机译:本研究的目标是介绍新型2×2 SOI集成光子相控阵开关的设计和仿真。蚀刻的NEMS操作的槽波导用作有源相移,提供紧凑尺寸和低功耗的益处。通过数值分析和仿真验证了NEMS操作移位器的设计。 FIMMPROP的有限差分模式三维全矢量级求解器用于模拟。所设计的NEMS操作的相移元件的长度仅为349μm,表现出约1.1dB的过量损失,并提供180O的相移。较高效率为约96.7%的直线过渡槽波导耦合器已经设计成将NEMS操作的相移器耦合到标准的未注销的波导。开关元件中使用的2×2 MMI(多模干扰)耦合器具有4μm×61.2μm的紧凑尺寸,具有约0.155dB的小于约0.155dB,最小的不平衡约为-0.004 dB。 NEMS操作的相移器位于开关的侧面,其具有最外部电极键合焊盘。光学干涉图响应用于测试设计的相移器。

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