首页> 外文会议>Conference on photonics north >Design, simulation and fabrication of nano-scale silicon-on-insulator (SOI) integrated photonic phased array switch elements (IPPAS) utilizing nano electromechanical systems (NEMS)
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Design, simulation and fabrication of nano-scale silicon-on-insulator (SOI) integrated photonic phased array switch elements (IPPAS) utilizing nano electromechanical systems (NEMS)

机译:利用纳米机电系统(NEMS)的纳米级绝缘体上硅(SOI)集成光子相控阵开关元件(IPPAS)的设计,仿真和制造

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The goal of this research is to introduce the design and simulation of a novel 2×2 SOI integrated photonic phased array switch. Under-etched NEMS-operated slot waveguides are used as the active phase shifters offering the benefits of compact size and low power consumption. The design of the NEMS-operated phase shifter has been validated by numerical analysis and simulation. The finite difference mode three-dimensional full-vectorial solver of FIMMPROP is used for the simulation. The designed NEMS-operated phase shift element is only 349 μm in length, exhibits an excess loss of about 1.1 dB and provides a phase shift of 180°. Straight transition slot waveguide couplers with high efficiency of about 96.7% have been designed to couple the NEMS-operated phase shifters to standard unslotted waveguides. The 2×2 MMI (multimode interference) couplers used in the switch element feature a compact size of 4 μm × 61.2 μm, have a small excess loss of about 0.155 dB and minimal imbalance of about -0.004 dB. The NEMS-operated phase shifters are located on the sides of the switch with their outermost electrode bond pads. Optical interferogram response is utilized for the testing of the designed phase shifters.
机译:这项研究的目的是介绍一种新颖的2×2 SOI集成光子相控阵开关的设计和仿真。使用蚀刻不足的NEMS操作的缝隙波导作为有源移相器,具有体积小,功耗低的优点。 NEMS操作的移相器的设计已通过数值分析和仿真验证。 FIMMPROP的有限差分模式三维全矢量求解器用于仿真。设计的由NEMS操作的相移元件长度仅为349μm,表现出约1.1 dB的额外损耗,并提供180°的相移。已设计出效率约为96.7%的直形过渡缝隙波导耦合器,以将NEMS操作的移相器耦合到标准无缝隙波导。开关元件中使用的2×2 MMI(多模干扰)耦合器具有4μm×61.2μm的紧凑尺寸,约0.155 dB的少量过大损耗和-0.004 dB的最小失衡。由NEMS操作的移相器位于开关的侧面,其最外层的电极焊盘。光学干涉图响应用于测试设计的移相器。

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