The standard electromigration model is extended by introducing an anisotropic diffusivity which depends on the general stress tensor and a new model of grain boundaries which describes dynamics of mobile vacancies and vacancies trapped in grain boundaries. The application scenario for electromigration simulation is presented. The new calibration and usage concept takes into account microstructural diversity of interconnect inputs. A simulaton example illustrating the effect of microstructural variation is presented and discussed.
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