Synthesis and Characterization of ZnTe Thin Films on Silicon by Thermal-Furnace Evaporation

摘要

Zinc telluride (ZnTe) compound is one of the attractive elements of the II–VI group also having wide range of applications such as switching devices, light-emitting diode, solar cells and photodetectors. In this paper, the microstructure and electrical properties of znic telluride thin films were studied by using thermal-furnace evaporation with emphasis on the effects of argon pressure and deposition temperature. Crystallinity, mobility, carrier concentration and sheet resistance are shown to be dependent on the argon pressure and deposition temperature. The grain size was increased with increasing the annealing temperature and decreasing the argon pressure. The highest carrier concentration of 1.9×10~(16) cm~(-3), the lowest sheet resistance of 3180 ohm/square and the largest mobility of 5.1×10~3 cm~2V~(-1)S~(-1) are presented at an argon pressure of 100 sccm and a deposition temperature of 580°C, respectively.