Write Buffer-aware Address Mapping for NAND Flash Memory Devices

摘要

By using small-sized, next-generation NVRAM (such as MRAM, FeRAM and PRAM) as a write buffer, we can improve the overall performance of the NAND flash memory-based storage systems. However, traditional address mapping algorithms in Flash Translation Layer (FTL) software were designed without any consideration of the existence of write buffer. In this paper, we propose a novel write buffer-aware flash translation layer algorithm, optimistic FTL, which is designed to harmonize well with NVRAM write buffers. Simulation results show that the proposed optimistic FTL outperforms previous log block-based FTL algorithms.