The Fabrication Of Insulating Layer On 4H-SiC By Hot Wire Nitridation

摘要

Nitride layer was formed on SiC surface by the hot wire assisted nitridation. The surface was characterized by XPS to discuss the effects of hot wire assistance. The nitride layer comprised of SiO_xN_y and Si_3N_4, and the interfacial layer was mainly Si3N4. Nitrogen concentration in the nitride layer increased with increasing substrate temperature and reaction time.