The Effect of Gate Dielectric Thickness on PMOS Performance

摘要

The dielectric layer in Metal Oxide Semiconductor Field Effect transistor (MOSFET) is a layer of very thin oxide which serves as insulator between the gate and channel. It's also known as gate oxide or gate dielectric. This paper presents the effect of gate dielectric thickness in p-channel MOSFET (PMOS) using Silvaco Technology Computer Aided Design (TCAD) tools. The gate dielectric thickness was found directly proportional to the threshold voltage. By using Silvaco TCAD tools, the optimum gate dielectric thickness was obtained by performing dry oxidation process. The gate dielectric thickness also was found inversely proportional to the junction depth.