The Effect of Divergence Rate in the Etching Process on the NMOS Properties

摘要

The effect due to the etching process in the fabrication of NMOS structure was investigated by varying the divergence rate. The different etching methods which are isotropic RIE etching and directional ME etching were not affected to the etch profile, junction depth and threshold voltage by the increasing of divergence rate using Silvaco TCAD tools software. The increasing of divergence rate have changed the etch profile of the NMOS structure from anisotropic to isotropic, decreasing of junction depth and gradually increasing the threshold voltage properties by using chemical RIE etching method.