Pressure Effect on Si Quantum-Dot Potential

机译：对Si量子点电位的压力影响

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Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect of pressure on the quantum dot potential is noticed. The results are investigated to be used in advanced technologies.

机译：介绍了量子点电位作为Si静压压力的函数的应用研究。本研究通过我们最近的模型计算了我们最近的模型，使用经验伪化方法。注意到压力对量子点电位的影响。研究结果是在先进技术中使用的。

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《International Conference on Nanoscience and Nanotechnology》|2009年||共5页
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Y. Al-Douri; U. Hashim; N.M. Ahmed; Z. Sauli;
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中图分类特种结构材料;
关键词
Quantum-Dot; Elemental Semiconductor; Pressure Effect PACS;

机译：Quantum-Dot;元素半导体;压力效果PACS;

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Pressure Effect on Si Quantum-Dot Potential

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